[PDF]    http://dx.doi.org/10.3952/lithjphys.48312

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 48, 243–247 (2008)


LUMINESCENCE STUDY OF ZnSe BASED SCINTILLATORS IN FREQUENCY DOMAIN
Pranciškus Vittaa, Gintautas Tamulaitisa, Dmitriy Shevchenkoa, Artūras Žukauskasa, Nikolai Starzhinskiyb, Konstantin Katrunovb, and Vladimir Ryzhikovb
aInstitute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9, LT-10222 Vilnius, Lithuania
E-mail: pranciskus.vitta@ff.vu.lt
bInstitute for Scintillation Materials of National Academy of Sciences of Ukraine, 60 Lenin Ave., UA-61001 Kharkov, Ukraine

Received 2 September 2008; accepted 18 September 2008

Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay components was observed.
Keywords: scintillator, radiation detectors, photoluminescence spectroscopy
PACS: 29.40.Mc, 78.47.Cd, 78.55.Et


ZnSe SCINTILIATORIŲ LIUMINESCENCIJOS TYRIMAI DAŽNINĖS SKYROS METODU
Pranciškus Vittaa, Gintautas Tamulaitisa, Dmitriy Shevchenkoa, Artūras Žukauskasa, Nikolai Starzhinskiyb, Konstantin Katrunovb, Vladimir Ryzhikovb
aVilniaus universiteto Medžiagotyros ir taikomųjų mokslų institutas, Vilnius, Lietuva
bUkrainos NMA Scintiliacinių medžiagų insitutas, Charkovas, Ukraina

Cinko selenidas ir jo daugiasluoksniai dariniai prieš dešimtmetį buvo intensyviai tyrinėjami siekiant sukurti mėlynus šviestukus ir lazerinius diodus. Šie bandymai buvo nesėkmingi dėl nepakankamo ZnSe heterodarinių ilgaamžiškumo. Tuo tarpu tūrinių ZnSe kristalų savybės yra stabilios, jie atsparūs drėgmei ir jonizuojančiajai spinduliuotei. Tinkamai parinkus auginimo ir šiluminio apdorojimo sąlygas, galima išauginti ZnSe monokristalus, pasižyminčius intensyvia priemaišine liuminescencija, kuri silpnai sugeriama kristale, nes jos spektras yra ZnSe draustiniame tarpe. Ši liuminescencija jau sėkmingai panaudota scintiliaciniuose Rentgeno spindulių ir jonizuojančiosios spinduliuotės jutikliuose.
Buvo tiriama izovalentinių priemaišų įtaka ZnSe scintiliacinių kristalų liuminescencijos našumui ir šios liuminescencijos laikinės charakteristikos. Tirti ZnSe kristalai su dažniausiai naudojama izovalentine telūro priemaiša ir deguonimi bei deguonies su aliuminiu priemaišomis. Parodyta, kad deguonis efektyviau nei telūras skatina priemaišinių spindulinės rekombinacijos centrų formavimą. Didžiausias šios liuminescencijos našumas gautas ZnSe(Al,O) kristaluose.
Liuminescencijos gesimo matavimai buvo atliekami mažo nepusiausvirųjų krūvininkų tankio režimu, kuris atitinka įprastą didelio jautrumo scintiliatorių darbo režimą. Tam naudota dažninės skyros metodika. Matavimai atlikti plačiame temperatūros intervale, stebėta donorų ir akceptorių rekombinacijai būdingo gesimo ir eksponentinio gesimo konkurencija.


References / Nuorodos

[1] L.V. Atroshchenko, S.F. Burachas, L.P. Gal'chinetskii, B.V. Grinev, V.D. Ryzhikov, and N.G. Starzhinskiy, Scintillator Crystals and Detectors of Ionizing Radiation on Their Basis (Naukova Dumka, Kiev, 1998) p. 312 [in Russian]
[2] P. Schotanus, P. Dorenbos, and V.D. Ryzhikov, Detection of CdS(Te) and ZnSe(Te) scintillation light with silicon photodiodes, IEEE Trans. Nucl. Sci. 39(4), 546–550 (1992),
http://dx.doi.org/10.1109/23.159663
[3] V. Ryzhikov, V. Chernikov, L. Gal'chinetskii, S. Galkin, E. Lisetskaya, A. Opolonin, and V. Volkov, The use of semiconductor scintillation crystals A(II)B(VI) in radiation instruments, J. Cryst. Growth 197(3), 655–658 (1999),
http://dx.doi.org/10.1016/S0022-0248(98)00771-4
[4] V. Ryzhikov, L. Gal'chinetskii, K. Katrunov, E. Lisetskaya, V. Gavriluk, O. Zelenskaya, N. Starzhynskiy, and V. Chernikov, Composite detector for mixed radiations based on CsI(Tl) and dispersions of small ZnSe(Te) crystals, Nucl. Instrum. Methods A 540(2–3), 395–402 (2005),
http://dx.doi.org/10.1016/j.nima.2004.12.030
[5] Y.K. Kim, J.K. Kim, W.G. Lee, S.Y. Kim, B.I. Kim, J.H. Ha, N. Starzhinskiy, V. Ryzhikov, and B. Grinyov, Properties of semiconductor scintillator ZnSe:O, Nucl. Instrum. Methods A 580(1), 258–261 (2007),
http://dx.doi.org/10.1016/j.nima.2007.05.096
[6] R. Baltramiejunas, V.D. Ryzhikov, V. Gavryushin, A. Kazlauskas, G. Raciukaitis, V.I. Silin, D. Juodzbalis, and V. Stepankevicius, Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe:Te crystals, J. Lumin. 52(1–4), 71–81 (1992),
http://dx.doi.org/10.1016/0022-2313(92)90234-Z
[7] L.V. Atroshchenko, S.N. Galkin, I.A. Rybalka, E.F. Voronkin, A.I. Lalayants, V.D. Ryzhikov, and A.G. Fedorov, Effects of tellurium concentration on the structure of melt-grown ZnSe crystals, Nucl. Instrum. Methods A 537(1–2), 211–214 (2005),
http://dx.doi.org/10.1016/j.nima.2004.08.011
[8] V.D. Ryzhikov, N.G. Starzhinskiy, L.P. Gal'chinetskii, and V.I. Silin, in: Functional Materials and Technology (Kharkov, 2001), p. 76
[9] V.D. Ryzhikov, N.G. Starzhinskiy, L.P. Gal'chinetskii, V.I. Silin, G. Tamulaitis, and E.K. Lisetskaya, The role of oxygen in formation of radiative recombination centers in ZnSe1–xTex crystals, Int. J. Inorg. Mater. 3(8), 1227–1229 (2001),
http://dx.doi.org/10.1016/S1466-6049(01)00138-6
[10] V. Ryzhikov, G. Tamulaitis, N. Starzhinskiy, L. Gal'chinetskii, A. Novickovas, and K. Kazlauskas, Luminescence dynamics in ZnSeTe scintillators, J. Lumin. 101(1–2), 45–53 (2003),
http://dx.doi.org/10.1016/S0022-2313(02)00387-3
[11] O.V. Vakulenko, V.N. Kravchenko, V.D. Ryzhikov, V.I. Silin, and N.G. Starzhinskiy, Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities, Semicond. 31(10), 1041–1045 (1997) [in Russian: Fiz. Tekh. Poluprovodn. 31(10), 1211–1215 (1997)],
http://dx.doi.org/10.1134/1.1187021
[12] V.D. Ryzhikov, B.V. Grinyov, E.N. Pirogov et al., Analysis of thermal treatment effects upon optico-luminescent and scintillation characteristics of oxide and chalcogenide crystals, Nucl. Instrum. Methods A 537(1–2), 223–227 (2005),
http://dx.doi.org/10.1016/j.nima.2004.08.014
[13] K.H. Lee, L.S. Dang, and G.D. Watkins, Optically detected magnetic resonance of the zinc vacancy in ZnSe, Solid State Commun. 35(7), 527–530 (1980),
http://dx.doi.org/10.1016/0038-1098(80)90889-3
[14] D.J. Dunstan, J.E. Nicholls, B.C. Cavenett, and J.J. Davies, Zinc vacancy-associated defects and donor-acceptor recombination in ZnSe, J. Phys. C 13(34), 6409–6419 (1980),
http://dx.doi.org/10.1088/0022-3719/13/34/011
[15] H.G. Grimmeis, C. Ovren, W. Ludwig, and R. Mach, Identification of deep centers in ZnSe, J. Appl. Phys. 48(12), 5122–5126 (1977),
http://dx.doi.org/10.1063/1.323589
[16] J.Z. Zheng, J.W. Allen, D.E. Spence, W.E. Sleat, and W. Sibbett, Decay time of the blue luminescence in ZnSe at room-temperature, Appl. Phys. Lett. 62(1), 63–65 (1993),
http://dx.doi.org/10.1063/1.108820
[17] A. Hoffmann, R. Heitz, B. Lummer, Ch. Fricke, V. Kutzer, I. Broser, W. Taudt, G. Gleitsmann, and M. Heuken, Incorporation of nitrogen in ZnSe grown by metalorganic vapour-phase epitaxy, J. Cryst. Growth 138(1–4), 379–384 (1994),
http://dx.doi.org/10.1016/0022-0248(94)90837-0
[18] H. Wang, K.S. Wong, B.A. Foreman, Z.Y. Yang, and G.K.L. Wong, One- and two-photon-excited time-resolved photoluminescence investigations of bulk and surface recombination dynamics in ZnSe, J. Appl. Phys. 83(9), 4773–4776 (1998),
http://dx.doi.org/10.1063/1.367268
[19] J.R. Lakowicz, Principles of Fluorescence Spectroscopy (Kluwer Academic / Plenum, New York, 1999),
http://dx.doi.org/10.1007/978-1-4757-3061-6
[20] D.G. Thomas, J.J. Hopfield, and W.M. Augustyniak, Kinetics of radiative recombination at randomly distributed donors and acceptors, Phys. Rev. 140(1A), A202–A220 (1965),
http://dx.doi.org/10.1103/PhysRev.140.A202