[PDF]
http://dx.doi.org/10.3952/lithjphys.49305
Open access article / Atviros prieigos straipsnis
Lith. J. Phys. 49, 261–265 (2009)
CAPACITANCE–VOLTAGE
CHARACTERISTICS OF Si STRUCTURES IRRADIATED BY PROTONS AND THEIR
FREQUENCY AND TEMPERATURE DEPENDENCES
S. Sakalauskasa and R. Pūrasb
aFaculty of Physics, Vilnius University, Saulėtekio
9, LT-10222 Vilnius, Lithuania
bInstitute of Materials Science and Applied
Research, Vilnius University, Saulėtekio 9, LT-10222 Vilnius,
Lithuania
E-mail: romualdas.puras@ff.vu.lt
Received 5 March 2009; revised 3
August 2009; accepted 15 September 2009
Experimental capacitancevoltage (C–V)
characteristics of silicon p-i-n diodes irradiated with
high energy protons and capacitance dependences on frequency and
temperature are presented in the paper and results are discussed.
The higher fluencies of proton irradiation lead to the larger
capacitance values of diodes biased to reverse voltage in the
range of 20–120 Hz frequency, given the other conditions are the
same. The capacitances of irradiated diodes are considerably
higher than the barrier capacitances of non-irradiated ones. The
energy of dominant defect deep level was calculated according to
analysis of capacitance–voltage dependences on frequency and
temperature.
Keywords: silicon diode, capacitance
spectroscopy, proton irradiation defects
PACS: 61.82.Fk, 71.55.Cn, 85.30.Kk
PROTONAIS ŠVITINTŲ Si DARINIŲ
VOLTFARADINĖS CHARAKTERISTIKOS IR JŲ DAŽNINĖS BEI TEMPERATŪRINĖS
PRIKLAUSOMYBĖS
S. Sakalauskasa, R. Pūrasb
aVilniaus universiteto Fizikos fakultetas, Vilnius,
Lietuva
bVilniaus universiteto Medžiagotyros ir
taikomųjų mokslų institutas, Vilnius, Lietuva
Pateiktos eksperimentinės didelės energijos
protonais švitintų silicio p-i-n diodų voltfaradinės
charakteristikos, jų dažninės bei temperatūrinės priklausomybės ir
iš to sekantys kai kurie apibendrinimai. Didesnis diodų apšvitos
protonais srautas, esant vienodoms kitoms sąlygoms, indukuoja
didesnes diodų, įjungtų atgaline kryptimi, talpas žemųjų (20–120
Hz) dažnių srityje, kurios žymiai viršija nešvitintų diodų
barjerinių talpų vertes. Iš voltfaradinių charakteristikų
priklausomybės nuo dažnio ir temperatūros analizės apskaičiuota
dominuojančio defekto gilaus lygmens energija.
References / Nuorodos
[1] J. Vobecky, P. Hazdra, and V. Záhlava, Helium irradiated
high-power P-i-N diode with low ON-state voltage drop,
Solid-State Electron. 47, 45–50 (2003),
http://dx.doi.org/10.1016/S0038-1101(02)00250-2
[2] M. Msimanga and M. McPherson, Diffusion characteristics of gold
in silicon and electrical properties of silicon diodes used for
developing radiation-hard detectors, Mater. Sci. Eng. B 127,
47–54 (2006),
http://dx.doi.org/10.1016/j.mseb.2005.09.060
[3] Yu.K. Akimov, Silicon radiation detectors, Instrum. Exp. Tech.
(Russia) 50(1), 1–28 (2007),
http://dx.doi.org/10.1134/S0020441207010010
[4] N.A. Poklonski, S.A. Vyrko, and A.G. Zabrodskii, Calculation of
capacitance of self-compensated semiconductors with intercenter hops
of one and two electrons (by the example of silicon with radiation
defects), Semicond. 42(12), 1388–1394 (2008),
http://dx.doi.org/10.1134/S1063782608120038
[5] L.S. Berman and A.A. Lebedev, Capacitive Spectroscopy of
Deep Centres in Semiconductors (Nauka, Leningrad, 1981) [in
Russian]
[6] J. Višniakov, T. Čeponis, E. Gaubas, and A. Uleckas,
Anneal-induced variations of the recombination characteristics in 2
MeV proton irradiated Si structures, Lithuanian J. Phys. 48(4),
325–331 (2008),
http://dx.doi.org/10.3952/lithjphys.48403
[7] P. Blood and J.W. Orton, The Electrical Characterization of
Semiconductors: Majority Carriers and Electron States
(Academic Press, London, 1992)
[8] D. Campbell, A. Chilingarov, and T. Sloan, Frequency and
temperature dependence of the depletion voltage from CV measurements
for irradiated Si detectors, Nucl. Instrum. Methods A 492,
402–410 (1997),
http://dx.doi.org/10.1016/S0168-9002(02)01353-0
[9] M. McPherson, Capacitive effects in neutron-irradiated silicon
diodes, Nucl. Instrum. Methods A 488, 100–109 (2002),
http://dx.doi.org/10.1016/S0168-9002(02)00480-1
[10] E. Borchi, M. Bruzzi, S. Pirollo, and S. Sciortino, Temperature
and frequency dependence of the capacitance of heavily irradiated
silicon diodes, Solid-State Electron. 42(11), 2093–2096
(1998),
http://dx.doi.org/10.1016/S0038-1101(98)00186-5
[11] D.K. Schroder, Semiconductor Material and Device
Characterization, 3 ed. (Wiley–IEEE Press, New Jersey, 2006),
http://eu.wiley.com/WileyCDA/WileyTitle/productCd-0471739065.html