[PDF]    http://dx.doi.org/10.3952/lithjphys.51307

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 51, 177–193 (2011)

Review

ULTRAVIOLET LIGHT EMITTING DIODES
G. Tamulaitis
Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Saulėtekio 9 bldg. 3, LT-10222 Vilnius, Lithuania
E-mail: gintautas.tamulaitis@ff.vu.lt

Received 9 September 2011; accepted 21 September 2011

The paper presents a review of the recent development of III-nitride based deep UV light emitting diodes (LEDs). Main applications of the deep UV LEDs are introduced. Review of material issues is focused on the lattice mismatch between the substrate and the active layer and at heterojunctions in multiple quantum well structures forming the active layer, the localization of nonequilibrium carriers, the material properties limiting the internal quantum efficiency, and the effect of efficiency droop at high density of nonequilibrium carriers. AlGaN is currently the semiconductor of choice for development of deep UV LEDs, so this material is the most discussed one in this review, though some information on AlInGaN is also provided.
Keywords: light emitting diodes, ultraviolet light sources, III-nitride semiconductors, AlGaN
PACS: 42.72.Bj, 78.55.Cr, 78.67.De, 85.60.Jb


ULTRAVIOLETINIAI ŠVIESTUKAI
G. Tamulaitis
Vilniaus universiteto Puslaidininkių fizikos katedra ir Taikomųjų mokslų institutas, Vilnius, Lietuva

Apžvelgta pažanga kuriant gilaus ultravioleto šviestukus (šviesos diodus) su aktyviąja terpe iš trečiosios grupės elementų nitridinių junginių. Supažindinama su svarbiausiomis gilaus ultravioleto šviestukų prietaikomis. Medžiagos savybių apžvalgoje didžiausias dėmesys skiriamas gardelės konstantų neatitikimui tarp padėklo ir aktyviosios terpės bei aktyvųjį sluoksnį sudarančių daugialypių kvantinių šulinių heterosandūrose, nepusiausvirųjų kvazidalelių lokalizacijai, medžiagų savybėms, ribojančioms vidinį kvantinį našumą, ir našumo smukimui esant dideliam nepusiausvirųjų krūvininkų tankiui. Gilaus ultravioleto šviestukų gamybai šiuo metu daugiausiai naudojamas AlGaN, todėl apžvalgoje daugiausiai aptarinėjamos šio junginio savybės. Tačiau straipsnyje pateikiama informacijos ir apie giminingą plačiatarpį keturgubą junginį AlInGaN.

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