IMPURITY-RELATED TERAHERTZ
EMISSION FROM QUANTUM WELL NANOSTRUCTURES
D.A. Firsov
a, L.E. Vorobjev
a, V.Yu. Panevin
a
, A.N. Sofronov
a, R.M. Balagula
a, and D.V. Kozlov
b
aSt. Petersburg State Polytechnical University,
Politechnicheskaya 29, 195251 St. Petersburg, Russia
E-mail: dmfir@rphf.spbstu.ru
bInstitute for Physics of Microstructures, Russian
Academy of Sciences, 603950 Nizhny Novgorod, Russia
Received 18 November 2013; accepted 4 December 2013
Terahertz emission in GaAs/AlGaAs
quantum well structures doped with shallow impurities was studied in
conditions
of interband optical excitation for n-doped structures and impurity
breakdown in the lateral electric field for p-doped structures.
Emission spectra were obtained. It was shown that the observed emission
is related to optical
transitions of charge carriers between impurity levels and to
impurity-band
transitions. The depopulation of the final states under interband
optical
pumping was realized with recombination of non-equilibrium holes and
electrons
localized at neutral donors.
Keywords:
terahertz emission, impurity, quantum wells, optical excitation,
impurity breakdown, GaAs/AlGaAs
PACS: 78.55.Cr , 78.60.Fi,
78.67.De, 78.70.Gq
PRIEMAIŠŲ NULEMTA TERAHERCINĖ
EMISIJA IŠ KVANTINIŲ ŠULINIŲ
NANODARINIŲ
D.A. Firsova, L.E. Vorobjeva, V.Yu. Panevina
, A.N. Sofronova, R.M. Balagulaa, D.V. Kozlov
b
aSankt Peterburgo valstybinis politechnikos
universitetas, Sankt Peterburgas, Rusija
bRusijos mokslų akademijos Fizikos mikrostruktūros
institutas, Nižnij Novgorodas, Rusija
References
/ Nuorodos
[1] P.-C. Lv, R.T. Troeger, T.N. Adam, S. Kim, J. Kolodzey, I.N.
Yassievich, M.A. Odnoblyudov, and M.S. Kagan, Appl. Phys. Lett.
85(1),
22–24
(2004),
http://dx.doi.org/10.1063/1.1769589
[2] S.G. Pavlov, R.Kh. Zhukavin, E.E. Orlova, V.N. Shastin, A.V.
Kirsanov, H.-W. Hübers, K. Auen, and H. Riemann, Phys. Rev. Lett.
84(22),
5220–5223 (2000),
http://dx.doi.org/10.1103/PhysRevLett.84.5220
[3] A.V. Andrianov, A.O. Zakhar’in, Yu.L. Ivanov, and M.S. Kipa, JETP
Lett.
91(2), 96–99 (2010),
http://dx.doi.org/10.1134/S0021364010020098
[4] D.A. Firsov, V.A. Shalygin, V.Yu. Panevin, G.A. Melentyev, A.N.
Sofronov, L.E. Vorobjev, A.V. Andrianov, A.O. Zakhar’in, V.S. Mikhrin,
A.P. Vasil’ev, A.E. Zhukov, L.V. Gavrilenko, V.I. Gavrilenko, A.V.
Antonov, and V.Ya. Aleshkin, Semiconductors
44(11), 1394–1397
(2010),
http://dx.doi.org/10.1134/S1063782610110023
[5] R.A. Lewis, T.S. Cheng, M. Henini, and J.M. Chamberlain, Phys. Rev.
B
53(19), 12829–12834 (1996),
http://dx.doi.org/
10.1103/PhysRevB.53.12829
[6]
V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, V.Yu. Panevin, A.N.
Sofronov, A.V. Andrianov, A.O. Zakhar’in, A.Yu. Egorov, A.G. Gladyshev,
O.V. Bondarenko, V.M. Ustinov, N.N. Zinov’ev, and D.V. Kozlov, Appl.
Phys. Lett.
90 (16), 161128(1–3) (2007),
http://dx.doi.org/10.1063/1.2730745