GATE LENGTH IMPACT ON PLASMA
OSCILLATIONS
DUE TO HOMOJUNCTIONS IN InGaAs FET/HEMT STRUCTURES
P. Shiktorov, E. Starikov, and V. Gružinskis
Semiconductor Physics Institute, Center for Physical Sciences and
Technology,
A. Goštauto 11, LT-01108 Vilnius, Lithuania
E-mail: jane@pav.pfi.lt
Received 18 November 2013; accepted 4 December 2013
Theoretical investigation of the
influence
of gate length on the hybrid plasma frequencies caused by the presence
of
homojunctions is performed by means of hydrodynamic simulations. It is
shown
that when a homojunction approaches the gated channel region
boundaries,
a qualitative change of the spectrum of plasma excitations both in
ungated
and gated regions of the channel takes place. These changes can modify
significantly
the high-frequency regions of spectra of both admittance/impedance and
current/voltage
noise at the structure terminals.
Keywords:
FET/HEMT structures, terahertz radiation, plasma waves, hybrid
resonances
PACS: 72.20.Ht, 72.30.+q
UŽTŪROS ILGIO ĮTAKA VIENALYČIŲ
SANDŪRŲ
SUKELTIEMS PLAZMOS VIRPESIAMS InGaAs FET/HEMT DARINIUOSE
P. Shiktorov, E. Starikov, V. Gružinskis
Fizinių ir technologojos mokslų centro Puslaidininkių fizikos
institutas,
Vilnius, Lietuva
Hidrodinaminiu modeliavimu teoriškai
išnagrinėta užtūros įtaka plazminių virpesių hibridiniam rezonansui
FET/HEMT darinių
homosandūrose. Skaitmeniniai rezultatai parodė plazminio sužadinimo
spektrų
kokybinius skirtumus kanalo dalyje po užtūra ir likusiose kanalo
dalyse,
kai homosandūros artėja prie kanalo po užtūra kraštų. Šie pokyčiai gali
stipriai
pakeisti darinio admitanso / impedanso ir srovės / įtampos triukšmo
spektrų
aukšto dažnio sritis.
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