A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (× 10¹⁶) e/cm², and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilities was found equal to 1.15 ± 0.25. The correspondence of the data measured by both methods opened the possibility of measurement of electron mobility in semiconductors with microinhomogeneities by magnetoresistance effect investigation.

Keywords: magnetoresistivity, silicon, electron irradiation, mobility
PACS: 72.20.My, 72.20.Dp, 72.20.-i

A. Mekys^a, V. Rumbauskas^a, J. Storasta^a, L. Makarenko^b, N. Kazuchits^b, J.V. Vaitkus^a
aVilniaus universiteto Medžiagotyros ir taikomųjų mokslų institutas, Vilnius, Lietuva
^bBaltarusijos valstybinis universitetas, Minskas, Baltarusija

Darbe tyrinėti n-tipo silicio bandiniai, apšvitinti 6,6 MeV energijos elektronais, pasitelkiant Holo ir magnetovaržos reiškinius. Bandinių geometrija išskirtinai tinka Holo reiškiniui, tačiau norėta išsiaiškinti, ar prasmingus rezultatus galima gauti matuojant ir magnetovaržą. Ankstesniais tyrimais buvo nustatyta, kad Holo įtampos signalas ženkliai iškraipomas, kai medžiagoje yra stambesni nevienalytiškumai, pvz., atsiradę dėl švitinimo (iki 10¹⁶/cm²) greitaisiais neutronais, o magnetovaržos signalas išlieka panašus, kaip ir nešvitintų bandinių. Šiame darbe silicis buvo apšvitintas elektronais, kurie daugiausiai kuria taškinius defektus. Išmatuotos temperatūrinės judrio ir laidumo priklausomybės nuo 100 iki 300 K intervale parodė, kad nors ir nesilaikoma magnetovaržos matavimams keliamų bandinių geometrijos reikalavimų, galima atlikti pakankamai kokybišką krūvininkų judrio analizę.

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