Lithuanian Journal of Physics article / Lietuvos fizikos žurnalo straipsnis

INFLUENCE OF VACANCIES ON INDIUM ATOM DISTRIBUTION IN InGaAs AND InGaN COMPOUNDS
Tatyana V. Bezyazychnaya^a, Dzmitry M. Kabanau^b, Vladimir V. Kabanov^b, Yahor V. Lebiadok^b, Andrew G. Ryabtsev^b, Gennadii I. Ryabtsev^b, Vladimir M. Zelenkovskii^a, and S.K. Mehta^c
^aInstitute of Physical-Organic Chemistry, National Academy of Sciences of Belarus, Surhanava St. 13, 220072 Minsk, Belarus
^bB.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Ave. 68, 220072 Minsk, Belarus
E-mail: ryabtsev@ifanbel.bas-net.by
^cSolid State Physics Laboratory, 110054 Delhi, India

Received 15 August 2014; revised 27 October 2014; accepted 10 December 2014

It has been theoretically ascertained that for defect-free InGaAs and InGaN compounds the uniform distribution of indium atoms is more energetically preferable than the clustering distribution. The presence of gallium and arsenic vacancy in InGaAs and nitrogen vacancy in InGaN facilitates indium atom clustering distribution. It has been shown that the increase in the indium content in InGaAs and InGaN compounds leads to the decrease of the formation energy of gallium, arsenic and nitrogen vacancies.

Keywords: InGaN, InGaAs, defect formation energy
PACS: 61.72.uj, 61.72.Bb

VAKANSIJŲ ĮTAKA INDŽIO ATOMŲ PASISKIRSTYMUI InGaAs IR InGaN JUNGINIUOSE

Tatyana V. Bezyazychnaya^a, Dzmitry M. Kabanau^b, Vladimir V. Kabanov^b, Yahor V. Lebiadok^b, Andrew G. Ryabtsev^b, Gennadii I. Ryabtsev^b, Vladimir M. Zelenkovskii^a, S.K. Mehta^c
^aBaltarusijos nacionalinės mokslų akademijos Fizikinės ir organinės chemijos institutas, Minskas, Baltarusija
^bBaltarusijos nacionalinės mokslų akademijos B.I. Stepanovo fizikos institutas, Minskas, Baltarusija
^cKietojo kūno fizikos laboratorija, Delis, Indija

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