[PDF]    http://dx.doi.org/10.3952/physics.v55i4.3220

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 55, 249–254 (2015)
QUANTUM AND TRANSPORT SCATTERING TIMES IN AlGaAs/InGaAs NANOHETEROSTRUCTURES WITH AlAs INSERTS IN THE SPACER LAYER
Galib B. Galieva, Ivan S. Vasil'evskiib, Evgenyi A. Klimova, Dmitry S. Ponomareva, Rustam A. Khabibullina, Vladimir A. Kulbachinskiic, Dmitry V. Gromovb, and Petr P. Maltseva
aInstitute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Nagornyi pr. 7, 117105 Moscow, Russia
E-mail: ponomarev@isvch.ru
bMoscow Engineering Physics Institute (MEPhI) – National Research Nuclear University, Kashirskoe sh. 31, 115409 Moscow, Russia
cM.V. Lomonosov Moscow State University, Moscow, GSP-1, 119991 Russia

Received 22 May 2015; accepted 29 September 2015

The influence of nano-sized AlAs inserts in the spacer layer AlGaAs on scattering mechanisms of AlGaAs/InGaAs nanoheterostructures has been considered. It was shown that the introduction of AlAs lead to mobility enhancement up to 20%. The ratio of transport-to-quantum scattering times revealed that in the case of the spacer with AlAs inserts the scattering on ionized Si-donors is strongly decreased in comparison to the spacer without AlAs.
Keywords: AlAs inserts, quantum and transport scattering times, scattering mechanisms, nanoheterostructure
PACS: 68.55.ag, 68.65.Fg, 72.80.Ey

KVANTINĖS IR ĮPRASTINĖS SKLAIDOS TRUKMĖS AlGaAs/InGaAs NANOHETERODARINIUOSE SU AlAs INTARPAIS BUFERINIAME SLUOKSNYJE
Galib B. Galieva, Ivan S. Vasil'evskiib, Evgenyi A. Klimova, Dmitry S. Ponomareva, Rustam A. Khabibullina, Vladimir A. Kulbachinskiic, Dmitry V. Gromovb, Petr P. Maltseva
aRusijos mokslų akademijos Superaukšto dažnio puslaidininkių elektronikos institutas, Maskva, Rusija
bNacionalinio branduolinių mokslinių tyrimų universiteto Maskvos inžinerinės fizikos institutas, Maskva, Rusija
cValstybinis Maskvos M.V. Lomonosovo universitetas, Maskva, Rusija

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