Received 7 May 2017; revised 21 June 2017; accepted 20 September
2017
References
/
Nuorodos
[1] D.J. Rogers, P. Bove, E.V. Sandana, F.H. Teherani, R.
McClintock, and M. Razeghi, Solid state deep UV
emitters/detectors: Zinc oxide moves further into the
ultraviolet, Laser Focus World
49(10), 1–15 (2013),
[HTML]
[2] Y. Zhang, M.K. Ram, E.K. Stefanakos, and D.T. Goswami,
Synthesis, characterization, and applications of ZnO nanowires,
J. Nanomater.
2012, 1–22 (2012),
https://doi.org/10.1155/2012/624520
[3] A. Raidou, M. Aggour, A. Qachaou, L. Laanab, and M. Fahoume,
Preparation and characterisation of ZnO thin films deposited by
SILAR method, Mor. J. Condens. Matter
12(2), 125–130
(2010),
http://revues.imist.ma/index.php?journal=MJCM&page=article&op=view&path[]=259
[4] S.B. Jambure, S.J. Patil, A.R. Deshpande, and C.D. Lokhande,
A comparative study of physicochemical properties of CBD and
SILAR grown ZnO thin films, Mater. Res. Bull.
49,
2588–2592 (2014),
https://doi.org/10.1016/j.materresbull.2013.09.007
[5] Y. Chen, J. Nayak, H.U. Ko, and J. Kim, Effect of annealing
temperature on the characteristics of ZnO thin films, J. Phys.
Chem. Solids
73, 1259–1263 (2012),
https://doi.org/10.1016/j.jpcs.2012.06.007
[6] T. Ren, H.R. Baher, and K.M. Poduska, Optical absorption
edge shifts in electrodeposited ZnO thin films, Thin Solid Films
515, 7976–7983 (2007),
https://doi.org/10.1016/j.tsf.2007.03.185
[7] F.K. Shan, B.C. Shin, S.C. Kim, and Y.S. Yu, Optical
properties of As doped ZnO thin films prepared by pulsed laser
deposition technique, J. Eur. Ceram. Soc.
24, 1861–1864
(2004),
https://doi.org/10.1016/S0955-2219(03)00489-8
[8] L. Xu, L. Shi, and X. Li, Preparation of nanocone ZnO thin
film and its aging effect of photoluminescence, Appl. Surf. Sci.
255, 5957–5960 (2009),
https://doi.org/10.1016/j.apsusc.2009.01.044
[9] F.K. Shan, G.X. Liu, W.J. Lee, G.H. Lee, I.S. Kim, B.C.
Shin, and Y.C. Kim, Transparent conductive ZnO thin films on
glass substrates deposited by pulsed laser deposition, J. Cryst.
Growth
277, 284–292 (2005),
https://doi.org/10.1016/j.jcrysgro.2005.01.016
[10] F.K. Shan, Z.F. Liu, G.X. Liu, W.J. Lee, G.H. Lee, I.S.
Kim, B.C. Shin, and Y.S. Yu, Aging and annealing effects of ZnO
thin films on GaAs substrates deposited by pulsed laser
deposition, J. Electroceram.
13(1–3), 195–200 (2004).
https://doi.org/10.1007/s10832-004-5098-7
[11] B.G. Guzeldir, M. Saglam, A. Ates, and A. Turut, Effects of
ageing on the electrical characteristics of Cd/CdS/n-Si/Au–Sb
structure deposited by SILAR method, J. Phys. Chem. Solids
72,
1506–1514 (2011),
https://doi.org/10.1016/j.jpcs.2011.09.008
[12] M. Saglam and B. Guzeldir, Time-dependent of
characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR
method, Mater. Res. Bull.
81, 55–62 (2016),
https://doi.org/10.1016/j.materresbull.2016.04.025
[13] K. Kim, J.E. Park, E.S. Park, Y.C. Park, J. Kim, J.C. Im,
and M.J. Lee, ZnS-passivated CdSe/CdS Co-sensitized mesoporous
Zn
2SnO
4 based solar cells, Electrochim.
Acta
121, 223–232 (2014),
https://doi.org/10.1016/j.electacta.2013.12.168
[14] K. Ravichandran, M. Vasanthi, K. Thirumurugan, B.
Sakthivel, and K. Karthika, Annealing induced reorientation of
crystallites in Sn doped ZnO films, Opt. Mater.
37,
59–64 (2014),
https://doi.org/10.1016/j.optmat.2014.04.045
[15] V. Shelke, M.P. Bhole, and D.S. Patil, Open air annealing
effect on the electrical and optical properties of tin doped ZnO
nanostructure, Solid State Sci.
14, 705–710 (2012),
https://doi.org/10.1016/j.solidstatesciences.2012.03.023
[16] S.C. Shei, P.Y. Lee, and S.J. Chang, Effect of temperature
on the deposition of ZnO thin films by successive ionic layer
adsorption and reaction, Appl. Surf. Sci.
258, 8109–8116
(2012),
https://doi.org/10.1016/j.apsusc.2012.05.004
[17] P.V. Rajkumar, K. Ravichandran, M. Beneto, C. Ravidhas, B.
Sakthivel, and N. Dineshbabu, Enhancement of optical and
electrical properties of SILAR deposited ZnO thin films through
fluorine doping and vacuum annealing for photovoltaic
applications, Mater. Sci. Semicond. Process.
35, 189–196
(2015),
https://doi.org/10.1016/j.mssp.2015.03.010
[18] K. Ravichandran, P.V. Rajkumar, B. Sakthivel, K.
Swaminathan, and L. Chinnappa, Role of precursor material and
annealing ambience on the physical properties of SILAR deposited
ZnO films, Ceram. Int.
40, 12375–12382 (2014),
https://doi.org/10.1016/j.ceramint.2014.04.086
[19] M.A. Yildirim and A. Ates, Influence of films thickness and
structure on the photo-response of ZnO films, Opt. Commun.
283,
1370–1377 (2010),
https://doi.org/10.1016/j.optcom.2009.12.009
[20] H. Güney and M.E. Ertarğın, Effective annealing of ZnO thin
films grown by three different SILAR processes, East. Anat. J.
Sci.
1, 20–24 (2015),
[PDF]
[21] A. Ghosha, N.G. Deshpande, Y.G. Gudagea, R.A. Joshi, A.A.
Sagade, D.M. Phase, and R. Sharma, Effect of annealing on
structural and optical properties of zinc oxide thin film
deposited by successive ionic layer adsorption and reaction
technique, J. Alloys Compd.
469, 56–60 (2009),
https://doi.org/10.1016/j.jallcom.2008.02.061