Saulius Marcinkevičius, Tomas Kristijonas Uždavinys, Ruslan
Ivanov, and Mounir Mensi
References
/
Nuorodos
[1] J. Jimenez and J.T. Tomm,
Spectroscopic Analysis of
Optoelectronic Semiconductors (Springer, Berlin, 2016),
https://doi.org/10.1007/978-3-319-42349-4
[2] I. Pelant and J. Valenta,
Luminescence Spectroscopy of
Semiconductors (Oxford Scholarship Online, Oxford, 2012),
https://doi.org/10.1093/acprof:oso/9780199588336.001.0001
[3] E. Betzig and J.K. Trautman, Near-field optics: microscopy,
spectroscopy and surface modification beyond the diffraction
limit, Science
257(5067), 189–195 (1992),
https://doi.org/10.1126/science.257.5067.189
[4] K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi, S.
Nair, and T. Takagahara, Near-field optical mapping of exciton
wave functions in a GaAs quantum dot, Phys. Rev. Lett.
91(17),
177401 (2003),
https://doi.org/10.1103/PhysRevLett.91.177401
[5] S. Patané, P.G. Gucciardi, M. Labardi, and M. Allegrini,
Apertureless near-field optical microscopy, Riv. Nuovo Cimento
27(1),
1 (2004),
https://doi.org/10.1393/ncr/i2004-10001-9
[6] G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, F. Bertram,
J. Christen, H. Amano, and I. Akasaki, Optical investigations of
AlGaN on GaN epitaxial films, Appl. Phys. Lett.
74(17),
2456 (1999),
https://doi.org/10.1063/1.123879
[7] R. Ivanov, S. Marcinkevičius, T.K. Uždavinys, L.Y. Kuritzky,
S. Nakamura, and J.S. Speck, Scanning near-field microscopy of
carrier lifetimes in m-plane InGaN quantum wells, Appl. Phys.
Lett.
110, 031109 (2017),
https://doi.org/10.1063/1.4974297
[8] A. Teke, S. Gökden, R. Tülek, J.H. Leach, Q. Fan, J. Xie, Ü.
Özgür, H. Morkoç, S.B. Lisesivdin, and E. Özbay, The effect of
AlN interlayer thicknesses on scattering processes in
lattice-matched AlInN/GaN two-dimensional electron gas
heterostructures, New J. Phys.
11, 063031 (2009),
https://doi.org/10.1088/1367-2630/11/6/063031
[9] A. Kaneta, R. Fujimoto, T. Hashimoto, K. Nishimura, M.
Funato, and Y. Kawakami, Instrumentation for dual-probe scanning
near-field optical microscopy, Rev. Sci. Instrum.
83,
083709 (2012),
https://doi.org/10.1063/1.4737883
[10] D. Watson-Parris, M.J. Godfrey, P. Dawson, R.A. Oliver,
M.J. Galtrey, M.J. Kappers, and C.J. Humphreys, Carrier
localization mechanisms in In
xGa
1–xN/GaN
quantum wells, Phys. Rev. B
83, 115321 (2011),
https://doi.org/10.1103/PhysRevB.83.115321
[11] T.K. Uždavinys, D.L. Becerra, R. Ivanov, S. Nakamura, S.P.
DenBaars, J.S. Speck, and S. Marcinkevičius, Influence of well
width fluctuations on recombination properties in semipolar
InGaN quantum wells studied by time- and spatially-resolved
near-field photoluminescence, Opt. Mater. Express
7(9),
3116–3123 (2017),
https://doi.org/10.1364/OME.7.003116
[12] K. Kazlauskas, G. Tamulaitis, P. Pobedinskas, A. Žukauskas,
M. Springis, C.F. Huang, Y.C. Cheng, and C.C. Yang, Exciton
hopping in In
xGa
1–xN
multiple quantum wells, Phys. Rev. B
71, 085306 (2005),
https://doi.org/10.1103/PhysRevB.71.085306
[13] V. Liuolia, S. Marcinkevičius, Y.D. Lin, H. Ohta, S.P.
DenBaars, and S. Nakamura, Carrier localization in
m-plane
InGaN/GaN quantum wells probed by scanning near field optical
spectroscopy, Appl. Phys. Lett.
97, 151106 (2010),
https://doi.org/10.1063/1.3502482
[14] T.-J. Yang, R. Shivaraman, J.S. Speck, and Y.-R. Wu, The
influence of random indium alloy fluctuations in indium gallium
nitride quantum wells on the device behavior, J. Appl. Phys.
116,
113104 (2014),
https://doi.org/10.1063/1.4896103
[15] S. Pereira, M.R. Correia, E. Pereira, K.P. O'Donnell, C.
Trager-Cowan, F. Sweeney, and E. Alves, Compositional pulling
effects in In
xGa
1–xN/GaN
layers: A combined depth-resolved cathodoluminescence and
Rutherford backscattering/channeling study, Phys. Rev. B
64,
205311 (2001),
https://doi.org/10.1103/PhysRevB.64.205311
[16] A. Mouti, J.-L. Rouvière, M. Cantoni, J.-F. Carlin, E.
Feltin, N. Grandjean, and P. Stadelmann, Stress-modulated
composition in the vicinity of dislocations in nearly lattice
matched Al
xIn
1–xN/GaN
heterostructures: A possible explanation of defect
insensitivity, Phys. Rev. B
83, 195309 (2011),
https://doi.org/10.1103/PhysRevB.83.195309
[17] S. Marcinkevičius, Y. Zhao, K.M. Kelchner, S. Nakamura,
S.P. DenBaars, and J.S. Speck, Near-field investigation of
spatial variations of (20
)
InGaN quantum well emission spectra, Appl. Phys. Lett.
103,
131116 (2013),
https://doi.org/10.1063/1.4823589
[18] T. Lermer, I. Pietzonka, A. Avramescu, G. Brüderl, J.
Müller, S. Lutgen, and U. Strauss, Interdependency of surface
morphology and wavelength fluctuations of indium-rich InGaN/GaN
quantum wells, Phys. Status Solidi A
208(5), 1199–1202
(2011),
https://doi.org/10.1002/pssa.201000695
[19] K.M. Kelchner, L.Y. Kuritzky, K. Fujito, S. Nakamura, S.P.
DenBaars, and J.S. Speck, Emission characteristics of single
InGaN quantum wells on misoriented nonpolar
m-plane bulk
GaN substrates, J. Cryst. Growth
382, 80–86 (2013),
https://doi.org/10.1016/j.jcrysgro.2013.08.013
[20] R. Ivanov, S. Marcinkevičius, M. Mensi, O. Martinez, L.Y.
Kuritzky, D.J. Myers, S. Nakamura, and J.S. Speck, Polarization
resolved near-field spectroscopy of localized states in nonpolar
InGaN/GaN quantum wells, Phys. Rev. Appl.
7, 064033
(2017),
https://doi.org/10.1103/PhysRevApplied.7.064033
[21] N.A.K. Kaufmann, L. Lahourcade, B. Hourahine, D. Martin,
and N. Grandjean, Critical impact of Ehrlich–Schwöbel barrier on
GaN surface morphology during homoepitaxial growth, J. Cryst.
Growth
433, 36–42 (2016),
https://doi.org/10.1016/j.jcrysgro.2015.06.013
[22] T.K. Uždavinys, S. Marcinkevičius, M. Mensi, L. Lahourcade,
J.-F. Carlin, D. Martin, R. Butté, and N. Grandjean, Impact of
surface morphology on the properties of light emission in InGaN
epilayers, Appl. Phys. Express
11, 051004 (2018),
https://doi.org/10.7567/APEX.11.051004
[23] M.H. Xie, S.M. Seutter, W.K. Zhu, L.X. Zheng, H. Wu, and
S.Y. Tong, Anisotropic step-flow growth and island growth of
GaN(0001) by molecular beam epitaxy, Phys. Rev. Lett.
82(13),
2749–2752 (1999),
https://doi.org/10.1103/PhysRevLett.82.2749
[24] J.E. Northrup and J. Neugebauer, Indium induced changes in
GaN(0001) surface morphology, Phys. Rev. B
60(12),
R8473–R8476 (1999),
https://doi.org/10.1103/PhysRevB.60.R8473
[25] P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J.
Menniger, M. Ramsteiner, M. Reiche, and K.H. Ploog, Nitride
semiconductors free of electrostatic fields for efficient white
light-emitting diodes, Nature
406, 865–868 (2000),
https://doi.org/10.1038/35022529
[26] S. Marcinkevičius, K.M. Kelchner, L.Y. Kuritzky, S.
Nakamura, S.P. DenBaars, and J.S. Speck, Highly polarized
photoluminescence and its dynamics in (20
)
InGaN/GaN quantum well, Appl. Phys. Lett.
103, 111107
(2013),
https://doi.org/10.1063/1.4820839
[27] O. Marquardt, T. Hickel, J. Neugebauer, and C.G. Van de
Walle, Polarization effects due to thickness fluctuations in
nonpolar InGaN/GaN quantum wells, Appl. Phys. Lett.
103,
073115 (2013),
https://doi.org/10.1063/1.4818752
[28] R. Ivanov, S. Marcinkevičius, Y. Zhao, D.L. Becerra, S.
Nakamura, S.P. DenBaars, and J.S. Speck, Impact of carrier
localization on radiative recombination times in semipolar (20
1)
plane InGaN/GaN quantum wells, Appl. Phys. Lett.
107,
211109 (2015),
https://doi.org/10.1063/1.4936386
[29] S. Schulz, D.P. Tanner, E.P. O'Reilly, M.A. Caro, T.L.
Martin, P.A.J. Bagot, M.P. Moody, F. Tang, J.T. Griffiths, F.
Oehler, M.J. Kappers, R.A. Oliver, C.J. Humphreys, D.
Sutherland, M.J. Davies, and P. Dawson, Structural, electronic,
and optical properties of
m-plane InGaN/GaN quantum
wells: Insights from experiment and atomistic theory, Phys. Rev.
B
92, 235419 (2015),
https://doi.org/10.1103/PhysRevB.92.235419
[30] H. Masui, H. Yamada, K. Iso, S. Nakamura, and S.P.
DenBaars, Optical polarization characteristics of m-oriented
InGaN/GaN light-emitting diodes with various indium compositions
in single-quantum-well structure, J. Phys. D
41, 225104
(2008),
https://doi.org/10.1088/0022-3727/41/22/225104
[31] W. Shan, T.J. Schmidt, X.H. Yang, S.J. Hwang, J.J. Song,
and B. Goldenberg, Temperature dependence of interband
transitions in GaN grown by metalorganic chemical vapor
deposition, Appl. Phys. Lett.
66, 985 (1994),
https://doi.org/10.1063/1.113820
[32] N. Rotenberg and L. Kuipers, Mapping nanoscale light
fields, Nat. Photonics
8, 919 (2014),
https://doi.org/10.1038/nphoton.2014.285
[33] Y.J. Sun, O. Brandt, M. Ramsteiner, H.T. Grahn, and K.H.
Ploog, Polarization anisotropy of the photoluminescence of
M-plane
(In, Ga)N/GaN multiple quantum wells, Appl. Phys. Lett.
82(22),
3850–3852 (2003),
https://doi.org/10.1063/1.1579563
[34] C. Mounir, U.T. Schwarz, I.L. Koslow, M. Kneissl, T.
Wernicke, T. Schimpke, and M. Strassburg, Impact of
inhomogeneous broadening on optical polarization of
high-inclination semipolar and nonpolar In
xGa
1–xN/GaN
quantum wells, Phys. Rev. B
93, 235314 (2016),
https://doi.org/10.1103/PhysRevB.93.235314
[35] S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S.P.
DenBaars, and J.S. Speck, Highly polarized photoluminescence and
its dynamics in (20
)
InGaN/GaN quantum well, Appl. Phys. Lett.
104, 111113
(2014),
https://doi.org/10.1063/1.4869459
[36] L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, and M.
Kneissl, Impact of band structure and transition matrix elements
on polarization properties of the photoluminescence of semipolar
and nonpolar InGaN quantum wells, Phys. Status Solidi B
248(3),
638–646 (2011),
https://doi.org/10.1002/pssb.201046350
[37] K. Alberi, B. Fluegel, H. Moutinho, R.G. Dhere, J.V. Li,
and A. Mascarenhas, Measuring long-range carrier diffusion
across multiple grains in polycrystalline semiconductors by
photoluminescence imaging, Nat. Commun.
4, 2699 (2013),
https://doi.org/10.1038/ncomms3699
[38] R. Aleksiejūnas, M. Sūdžius, V. Gudelis, T. Malinauskas, K.
Jarašiūnas, Q. Fareed, R. Gaska, M.S. Shur, J. Zhang, J. Yang,
E. Kuokštis, and M.A. Khan, Carrier transport and recombination
in InGaN/GaN heterostructures, studied by optical four-wave
mixing technique, Phys. Status Solidi C
0(7), 2686–2690
(2003),
https://doi.org/10.1002/pssc.200303261
[39] M. Mensi, R. Ivanov, T.K. Uždavinys, K.M. Kelchner, S.
Nakamura, S.P. DenBaars, J.S. Speck, and S. Marcinkevičius,
Direct measurement of nanoscale lateral carrier diffusion:
toward scanning diffusion microscopy, ACS Photonics
5(2),
528–534 (2018),
https://doi.org/10.1021/acsphotonics.7b01061
[40] S.-H. Park, D. Ahn, and S.L. Chuang, Electronic and optical
properties of a- and m-plane wurtzite InGaN-GaN quantum wells,
IEEE J. Quantum Electron.
43(12), 1175–1182 (2007),
https://doi.org/10.1109/JQE.2007.905009