[PDF]    https://doi.org/10.3952/physics.v58i2.3747

Open access article / Atviros prieigos straipsnis

Lith. J. Phys. 58, 177–187 (2018)
SIMULATION OF DYNAMIC CHARACTERISTICS OF GaN p-i-n AVALANCHE DIODE OPERATING AS PARTICLE DETECTOR WITH INTERNAL GAIN
Juozas Vyšniauskasa and Eugenijus Gaubasb
aInstitute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio 3, 10257 Vilnius, Lithuania
bInstitute of Photonics and Nanotechnology, Vilnius University, Saulėtekio 3, 10257 Vilnius, Lithuania
E-mail: juozas.vysniauskas@ff.vu.lt; eugenijus.gaubas@ff.vu.lt
Received 8 December 2017; revised 15 January 2018; accepted 21 June 2018

An evolution of the transient characteristics of the GaN p-i-n diodes, operating in the avalanche mode and acting as particle sensors, has been simulated by using the Synopsys TCAD Sentaurus software package and the drift-diffusion approach. Profiling of the charge generation, recombination and drift-diffusion processes has been performed over a nanosecond time-scale with a precision of a few picoseconds and emulated through the photo-excitation of an excess carrier domain at different locations of the active volume of a diode. Shockley–Read–Hall (SRH), Auger and radiative recombination processes have been taken into account. Fast and slow components within a current transient have been analysed based on the consideration of the carrier spatial distribution at different instants of the avalanche process. The internal gain due to charge multiplication ensures the sufficient charge collection on electrodes of the relatively thin (5 μm) diode operating in the avalanche mode. It has been shown that the simulated evolution of the detector transient responses by employing the drift-diffusion approach reproduces properly the qualitative modifications of the main features of a detector with an internal gain, realized by induction of the avalanche processes governed by the applied external voltage.
Keywords: GaN, simulation, p-i-n diodes, impact ionization, particle detectors, TCAD
PACS: 85.30.Mn

GaN GRIŪTINIO p-i-n STRUKTŪROS DALELIŲ DETEKTORIAUS SU VIDINIU STIPRINIMU DINAMINIŲ CHARAKTERISTIKŲ MODELIAVIMAS
Juozas Vyšniauskasa, Eugenijus Gaubasb

aVilniaus universiteto Taikomosios elektrodinamikos ir telekomunikacijų institutas, Vilnius, Lietuva
bVilniaus universiteto Fotonikos ir nanotechnologijų institutas, Vilnius, Lietuva

Galio nitrido p-i-n griūtinio diodo dinaminės charakteristikos buvo sumodeliuotos, pasitelkiant dreifinį-difuzinį modelį iš Synopsys TCAD Sentaurus programų paketo. Tokių spinduliuotės jutiklių srovės signalų kitimų profiliavimas įgyvendintas emuliuojant spinduliuotės poveikį antrinių krūvininkų porų injekcija įvairiose diodo aktyviosios srities vietose, pasitelkiant optinio sužadinimo trumpais impulsais parametrus, artimus eksperimentinėms situacijoms. Parodyta, kad difuzijos-dreifo artinys yra tinkamas GaN p-i-n detektorių charakteristikų kaitos sumodeliavimui ir radiacinės jutiklių degradacijos kompensavimui, pasitelkiant valdomą išorine įtampa griūtinį diodo režimą. Dėl krūvininkų dauginimosi vidinis stiprinimas užtikrina pakankamą krūvio surinkimą gana plonuose (5 mikrometrai) dalelių jutikliuose.

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