[1] D. Bimberg, M. Sondergeld, and E. Grobe, Thermal
dissociation of excitons bound to neutral acceptors in
high-purity GaAs, Phys. Rev. B
4, 3451 (1971),
https://doi.org/10.1103/PhysRevB.4.3451
[2] M. Hugues, B. Damilano, J.-Y. Duboz, and J. Massies, Exciton
dissociation and hole escape in the thermal photoluminescence
quenching of (Ga, In)(N, As) quantum wells, Phys. Rev. B
75,
115337 (2007),
https://doi.org/10.1103/PhysRevB.75.115337
[3] Y. Yang, P. Ma, X. Wei, D. Yan, Y. Wang, and Y. Zeng, Design
strategies for enhancing carrier localization in InGaN-based
light-emitting diodes, J. Lumin.
155, 238 (2014),
https://doi.org/10.1016/j.jlumin.2014.05.002
[4] H.D. Sun, S. Calvez, M.D. Dawson, J.A. Gupta, G.C. Aers, and
G.I. Sproule, Thermal quenching mechanism of photoluminescence
in 1.55 μm GaInNAsSb/Ga(N)As quantum-well structures, Appl.
Phys. Lett.
89, 101909 (2006),
https://doi.org/10.1063/1.2345240
[5] K.L. Teo, J.S. Colton, P.Y. Yu, E.R. Weber, M.F. Li, W. Liu,
K. Uchida, H. Tokunaga, N. Akutsu, and K. Matsumoto, An analysis
of temperature dependent photoluminescence line shapes in InGaN,
Appl. Phys. Lett.
73, 1697 (1998),
https://doi.org/10.1063/1.122249
[6] X.H. Zheng, H. Chen, Z.B. Yan, D.S. Li, H.B. Yu, Q. Huang,
and J.M. Zhou, Influence of the deposition time of barrier
layers on optical and structural properties of high-efficiency
green-light-emitting InGaN/GaN multiple quantum wells, J. Appl.
Phys.
96, 1899 (2004),
https://doi.org/10.1063/1.1769099
[7] M.A. Sousa, T.C. Esteves, N.B. Sedrine, J. Rodrigues, M.B.
Laurenco, A. Redondo-Cubero, E. Alves, K.P. O'Donnell, M.
Bockowski, C. Wetzel, M.R. Correia, K. Lorenz, and T. Monteiro,
Luminescence studies on green emitting InGaN/GaN MQWs implanted
with nitrogen, Sci. Rep.
5, 9703 (2015),
https://doi.org/10.1038/srep09703
[8] A. Yasan, R. McClintock, K. Mayes, D.H. Kim, P. Kung, and M.
Razeghi, Photoluminescence study of AlGaN-based 280 nm
ultraviolet light-emitting diodes, Appl. Phys. Lett.
83,
4083 (2003),
https://doi.org/10.1063/1.1626808
[9] J. Mickevičius, G. Tamulaitis, J. Jurkevičius, M.S. Shur, M.
Shatalov, J. Yang, and R. Gaska, Efficiency droop and carrier
transport in AlGaN epilayers and heterostructures, Phys. Status
Solidi B
252, 961 (2015),
https://doi.org/10.1002/pssb.201451542
[10] S.D. Baranovskii, Theoretical description of charge
transport in disordered organic semiconductors, Phys. Status
Solidi B
252, 961 (2014),
https://doi.org/10.1002/pssb.201350339
[11] O. Rubel, S.D. Baranovskii, K. Hantke, B. Kunert, W.W.
Ruhle, P. Thomas, K. Volz, and W. Stolz, Model of temperature
quenching of photoluminescence in disordered semiconductors and
comparison to experiment, Phys. Rev. B
73, 233201
(2006),
https://doi.org/10.1103/PhysRevB.73.233201
[12] M. Baranowski, R. Kudrawiec, J. Misiewicz, H. Turski, and
C. Skierbiszewski, Photoluminescence characterization of
InGaN/InGaN quantum wells grown by plasma-assisted molecular
beam epitaxy: impact of nitrogen and gallium fluxes, Phys.
Status Solidi B
252, 983 (2015),
https://doi.org/10.1002/pssb.201451588
[13] K. Jandieri, B. Kunert, S. Liebich, M. Zimprich, K. Volz,
W. Stolz, F. Gebhard, S.D. Baranovskii, N. Koukourakis, N.C.
Gerhardt, and M.R. Hofmann, Nonexponential photoluminescence
transients in Ga(NAsP) lattice matched to a (001) silicon
substrate, Phys. Rev. B
87, 035303 (2013),
https://doi.org/10.1103/PhysRevB.87.035303
[14] S.D. Baranovskii, R. Eichmann, and P. Thomas,
Temperature-dependent exciton luminescence in quantum wells by
computer simulation, Phys. Rev. B
58, 13081 (1998),
https://doi.org/10.1103/PhysRevB.58.13081
[15] M. Baranowski, M. Latkowska, R. Kudrawiec, and J.
Misiewicz, Model of hopping excitons in GaInNAs: simulations of
sharp lines in micro-photoluminescence spectra and their
dependence on the excitation power and temperature, J. Phys.
Condens. Matter
23, 205804 (2011),
https://doi.org/10.1088/0953-8984/23/20/205804
[16] P.G. Eliseev, P. Perlin, J. Lee, and M. Osinski, 'Blue'
temperature-induced shift and band-tail emission in InGaN-based
light sources, Appl. Phys. Lett.
71, 569 (1997),
https://doi.org/10.1063/1.119797
[17] K. Kazlauskas, A. Žukauskas, G. Tamulaitis, J. Mickevičius,
M.S. Shur, R.S. Qhalid Fareed, J.P. Zhang, and R. Gaska, Exciton
hopping and nonradiative decay in AlGaN epilayers, Appl. Phys.
Lett.
87, 172102 (2005),
https://doi.org/10.1063/1.2112169
[18] J. Mickevičius, G. Tamulaitis, M. Shur, M. Shatalov, J.
Tang, and R. Gaska, Internal quantum efficiency in AlGaN with
strong carrier localization, Appl. Phys. Lett.
101,
211902 (2012),
https://doi.org/10.1063/1.4767657