Lithuanian Journal of Physics article / Lietuvos fizikos žurnalo straipsnis

INFLUENCE OF AN ULTRA-THIN BUFFER LAYER ON THE GROWTH AND PROPERTIES OF PSEUDOMORPHIC GaAsBi LAYERS
Simona Pūkienė^a, Algirdas Jasinskas^a, Andrea Zelioli^a, Sandra Stanionytė^a,b, Virginijus Bukauskas^c, Bronislovas Čechavičius^a, Evelina Dudutienė^a, and Renata Butkutė^a,d
^aDepartment of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
^b Department of Characterisation of Materials Structure, Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
^c Department of Physical Technologies, Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
^d Photonics and Nanotechnology Institute, Faculty of Physics, Vilnius University, Saulėtekio 3, 10257 Vilnius, Lithuania
Email: renata.butkute@ftmc.lt

Received 23 June 2022; revised 1 July; accepted 1 July 2022

A series of 100 nm-thick pseudomorphic GaAsBi layers with the Bi content varying from 0.97 to 11.2% have been grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs(100) substrates buffered with an ultra-thin up to 20 nm thick GaAs layer. The main attention in this work was focused on the investigation of relaxation in the Bi induced compressively-strained GaAsBi layers containing a various content of Bi. The lattice parameters of GaAsBi compound and the Bi concentration have been evaluated from high resolution X-ray diffraction measurements. The relaxation values of GaAsBi layers ranging from 0.4 to 3.5% were obtained analyzing the symmetric and asymmetric reciprocal space maps of (004) and (115) planes, respectively. Also, the complex study was performed to clarify the relaxation effect on structural, morphological and optical properties of bismide layers. Optical measurements revealed a significant reduction of the energy band gap from 1.34 to 0.92 eV for the layers containing 0.97–8.6% of Bi in the GaAs lattice.
Keywords: GaAsBi, molecular beam epitaxy, X-ray diffraction, photoluminescence, atomic force microscopy

PLONOJO BUFERINIO SLUOKSNIO ĮTAKA PSEUDOMORFINIŲ GaAsBi SLUOKSNIŲ AUGINIMUI IR SAVYBĖMS
Simona Pūkienė^a, Algirdas Jasinskas^a, Andrea Zelioli^a, Sandra Stanionytė^a,b, Virginijus Bukauskas^c, Bronislovas Čechavičius^a, Evelina Dudutienė^a, Renata Butkutė^a,d

^aFizinių ir technologijos mokslų centro Optoelektronikos skyrius, Vilnius, Lietuva
^b Fizinių ir technologijos mokslų centro Medžiagų struktūrinės analizės skyrius, Vilnius, Lietuva
^c Fizinių ir technologijos mokslų centro Fizikinių technologijų skyrius, Vilnius, Lietuva
^d Vilniaus universiteto Fizikos fakulteto Fotonikos ir nanotechnologijų institutas, Vilnius, Lietuva

Darbe buvo tiriama 100 nm storio pseudomorfinių GaAsBi sluoksnių, kuriuose Bi kiekis kito nuo 0,97 iki 11,2 %, serija. Sluoksniai buvo užauginti molekulinių pluoštelių epitaksijos metodu ant pusiau izoliuojančių GaAs (100) padėklų, padengiant juos itin plonu iki 20 nm buferiniu GaAs sluoksniu. Pagrindinis šio darbo tikslas buvo įvertinti buferinio GaAs sluoksnio poveikį skirtingą Bi kiekį talpinančio GaAsBi sluoksnio kristalinei sandarai, relaksacijai bei paviršiaus morfologijai ir optinėms savybėms. GaAsBi junginio kristalinės gardelės parametrai ir Bi koncentracija buvo įvertinti naudojant didelės skiriamosios gebos rentgeno spindulių difrakcijos matavimus. Relaksacijos vertės, gautos analizuojant simetrinius ir asimetrinius atvirkštinės gardelės žemėlapius, pamatuotus nuo (004) ir (115) plokštumų, atitinkamai kito nuo 0,4 iki 3,5 %. Optiniai matavimai atskleidė ženklų GaAsBi junginio draustinio energijos tarpo sumažėjimą nuo 1,34 iki 0,9 eV sluoksniams, bismuto kiekiui gardelėje didėjant nuo 0,97 iki 8,6 %.

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