Lithuanian Journal of Physics article / Lietuvos fizikos žurnalo straipsnis

OPTIMIZATION OF TERAHERTZ DETECTORS BASED ON GRAPHENE FIELD EFFECT TRANSISTORS BY HIGH IMPEDANCE ANTENNAE
Domantas Vizbaras^a, Kęstutis Ikamas^a,c, Sandra Pralgauskaitė^a, Jonas Matukas^a, Andrey A. Generalov^d, and Alvydas Lisauskas^a,b
^aInstitute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio 3, 10257 Vilnius, Lithuania
^bCENTERA Laboratories, Institute of High Pressure Physics PAS, Warsaw, 01-142 Poland
^cResearch Group on Logistics and Defense Technology Management, General Jonas Žemaitis Military Academy of Lithuania, Šilo 5, 10322 Vilnius, Lithuania
^dVTT Technical Research Centre of Finland LTD, P.O. Box 1000, FI-02044 VTT
Email: domantas.vizbaras@ff.vu.lt

Received 23 October 2022; accepted 23 October 2022

This contribution presents the results of investigations performed on monolayer graphene field effect transistor-based (GFET-based) terahertz detectors. We have implemented three different types of planar antennae: a bow-tie, a bow-tie with transmission lines and a slot-disc, allowing us to realize different conditions for high-frequency impedance matching. We present a semi-empirical model which uses physical parameters derived from electrical characterization results of devices and electrodynamic characteristics of antennae, allowing us to predict THz responsivity. Model predictions have been compared with the responsivity measurements performed at room temperature in a frequency range from 50 to 1250 GHz. Good agreement between the model predictions and experimental results implies the eligibility of a distributed resistive mixing approximation for GFET. In addition, the device stability, the temperature dependence and the origin of noise in the transistor channel have been investigated. Finally, to the best of our knowledge, we demonstrate the record performance values for room temperature graphene-based terahertz detectors: 80V/W optical responsivity without the normalization to the antenna effective area and a noise equivalent power of 111 pW/ $\sqrt{\mathrm{Hz}}$ at 336 GHz.
Keywords: power detectors, field effect transistor (FET), graphene, submillimeter wave measurements, terahertz (THz), hysteresis, analytical model

TERAHERCŲ DETEKTORIŲ SU GRAFENO LAUKO TRANZISTORIAIS OPTIMIZACIJA AUKŠTADAŽNĖS PILNUTINĖS VARŽOS ANTENOMIS
Domantas Vizbaras^a, Kęstutis Ikamas^a,c, Sandra Pralgauskaitė^a, Jonas Matukas^a, Andrey A. Generalov^d, Alvydas Lisauskas^a,b

^aVilniaus universiteto Taikomosios elektrodinamikos ir telekomunikacijų institutas, Vilnius, Lietuva
^bAukšto slėgio fizikos instituto CENTERA laboratorijos, Varšuva, Lenkija
^cGenerolo Jono Žemaičio Lietuvos karo akademijos Logistikos ir gynybos technologijų vadybos mokslo grupė, Vilnius, Lietuva
^dSuomijos techninių tyrimų centras VTT, Espas, Suomija

Šiame darbe pateikiami terahercų detektorių su vieno sluoksnio grafeno lauko tranzistoriumi (GLT) tyrimų rezultatai. Ištirti detektoriai su trimis skirtingomis paviršinio tipo antenomis: peteliške, peteliške su perdavimo linijomis ir disku su plyšiu. Pasiūlytas sprendimas leido sukurti skirtingas aukštadažnės pilnutinės varžos suderinimo sąlygas. Skaičiuojant įtaisų jautrį buvo pritaikytas pusiau empirinis modelis, kuriame panaudoti fizikiniai parametrai, gauti išmatavus įtaisų elektrines charakteristikas, ir sumodeliuoti antenų elektrodinaminiai parametrai. Modeliavimo rezultatai palyginti su kambario temperatūroje 50–1250 GHz dažnių ruože išmatuotomis jautrio vertėmis. Geras eksperimentinių ir teorinių rezultatų sutapimas rodo, kad paskirstyto varžinio maišymo artinį sėkmingai galima taikyti ir vieno sluoksnio grafeno lauko tranzistoriams. Taip pat ištirtas detektorių stabilumas, parametrų priklausomybė nuo temperatūros bei įvertinta tranzistoriaus kanalo triukšmų kilmė. Darbe pateiktas rekordinis GLT terahercų detektorių optinis jautris ir efektinė triukšmų galia: atitinkamai, 80 V/W ir 111 pW/ $\sqrt{\mathrm{Hz}}$ ties 336 GHz dažniu kambario temperatūroje.

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