[PDF]    https://doi.org/10.3952/physics.2023.63.1.5

Open access article / Atviros prieigos straipsnis
Lith. J. Phys. 63, 35–39 (2023)

EFFECT OF LOW-DOSE-RATE IONIZING RADIATION ON THE COMPLEX DIELECTRIC PERMITTIVITY OF CdZnTe CRYSTALS
Oleksii Poluboiarov, Oleg Chugai, Serhii Oliinyk, Denys Sliusar, and Sergei Sulima
Department of Physics, Kharkiv National Aerospace University ‘Kharkiv Aviation Institute’, 17 Chkalova Street, 61070 Kharkiv, Ukraine
Email: c1u3ga7j@gmail.com

Received 21 February 2023; accepted 21 February 2023

For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.
Keywords: localized states, semiconductors, complex dielectric permittivity, cadmium zinc-telluride, ionizing radiation

MAŽŲ DOZĖS GALIŲ JONIZUOJANČIOSIOS SPINDULIUOTĖS POVEIKIS CdZnTe KRISTALŲ KOMPLEKSINEI DIELEKTRINEI SKVARBAI
Oleksii Poluboiarov, Oleg Chugai, Serhii Oliinyk, Denys Sliusar, Sergei Sulima

Charkivo nacionalinio aviacijos universiteto „Charkivo aviacijos institutas“ Fizikos fakultetas, Charkivas, Ukraina


References / Nuorodos

[1] V.K. Komar, S.V. Sulima, O.N. Chugai, S.L. Abashin, O.T. Nikolov, S.V. Oleinik, V.M. Puzikov, I.S. Terzin, and Yu.A. Yatsina, Effect of ionizing radiation in ultrasmall doses on dielectric properties of CdZnTe crystals with anomalously high polarizability, Tech. Phys. Lett. 37, 589 (2011),
https://doi.org/10.1134/S106378501107008X
[2] V.F. Dvoryankin, G.G. Dvoryankina, A.A. Kudryashov, A.G. Petrov, V.D. Golyshev, and S.V. Bykova, X-ray sensitivity of Cd0.9Zn0.1Te detectors, Tech. Phys. 55, 306–308 (2010),
https://doi.org/10.1134/S1063784210020246
[3] V.F. Dvoryankin, G.G. Dvoryankina, A.A. Kudryashov, A.G. Petrov, A.A. Davydov, N.V. Zhavoronkov, and D.V. Kapkin, X-ray detectors based on CdZnTe crystals grown from the vapor phase, Tech. Phys. 57, 1462–1464 (2012),
https://doi.org/10.1134/S1063784212100040
[4] A.U. Sheleg, K.V. Iodkovskaya, and N.F. Kurilovich, Effect of gamma radiation on the permittivity and electrical conductivity of TlGaS2 crystals, Phys. Solid State 45, 69–72 (2003),
https://doi.org/10.1134/1.1537412
[5] V.K. Komar, V.P. Migal, O.N. Chugai, V.M. Puzikov, D.P. Nalivaiko, and N.N. Grebenyuk, Investigation of localized states in cadmium zinc telluride crystals by scanning photodielectric spectroscopy, Appl. Phys. Lett. 81, 4195–4197 (2002),
https://doi.org/10.1063/1.1525883
[6] P. Fougeres, P. Siffert, M. Hageali, J.M. Koebel, and R. Regal, CdTe and Cd1–xZnxTe for nuclear detectors: facts and fictions, Nucl. Instrum. Methods Phys. Res. A 428, 38–44 (1999),
https://doi.org/10.1016/S0168-9002(98)01578-2
[7] E. Zarkadoula, G. Samolyuk, and W.J. Weber, Effects of electronic excitation in 150 keV Ni ion irradiation of metallic systems, AIP Adv. 8, 015121 (2018),
https://doi.org/10.1063/1.5016536
[8] Y. Zhang and W.J. Weber, Ion irradiation and modification: The role of coupled electronic and nuclear energy dissipation and subsequent nonequilibrium processes in materials, Appl. Phys. Rev. 7, 041307 (2020),
https://doi.org/10.1063/5.0027462
[9] A.K. Verma, Introduction to Modern Planar Transmission Lines: Physical, Analytical, and Circuit Models Approach, Ch. 6 (Wiley-IEEE Press, 2021) pp. 159–211,
https://doi.org/10.1002/9781119632443.ch6
[10] L. Xu, T. Feng, and W. Jie, Defect levels characterized by photoconductivity and thermally stimulated current in CdZnTe crystals, J. Cryst. Growth 560, 126050 (2021),
https://doi.org/10.1016/j.jcrysgro.2021.126050
[11] Y. Li, G. Zha, D. Wei, F. Yang, J. Dong, S. Xi, L. Xu, and W. Jie, Effect of deep-level defects on the performance of CdZnTe photon counting detectors, Sensors 20, 2032 (2020),
https://doi.org/10.3390/s20072032
[12] T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, and R.B. James, Cadmium zinc telluride and its use as a nuclear radiation detector material, Mater. Sci. Eng. R Rep. 32(4–5), 103–189 (2001),
https://doi.org/10.1016/S0927-796X(01)00027-4
[13] D.E. Onopko and A.I. Ryskin, Physical foundations of metastable impurity center reconstruction in semiconductors, Semiconductors 35, 1223–1230 (2001),
https://doi.org/10.1134/1.1418062
[14] A.G. Nikitina and V.V. Zuev, Bistable amphoteric centers in semiconductors, Semiconductors 42, 142–148 (2008),
https://doi.org/10.1134/S1063782608020048
[15] T. Thio, J.W. Bennett, D.J. Chadi, R.A. Linke, and P. Becla, DX centres in CdZnTe: Cl and their applications, J. Cryst. Growth 159(1–4), 345–349 (1996),
https://doi.org/10.1016/0022-0248(95)00681-8