[PDF]    https://doi.org/10.3952/physics.2023.63.3.3

Open access article / Atviros prieigos straipsnis
Lith. J. Phys. 63, 131–139 (2023)

VOLTAGE COTROLLED FABRY–PEROT MODULATOR
Andrius Kamarauskasa, Laurynas Staišiūnasa, Dalius Seliutaa,b, Gediminas Šlekasa, and Žilvinas Kanclerisa
a Center for Physical Sciences and Technology, Saulėtekio 3, 10257 Vilnius, Lithuania
b Vilnius Gediminas Technical University, Saulėtekio 11, 10223 Vilnius, Lithuania
Email: andrius.kamarauskas@ftmc.lt

Received 19 September 2023; accepted 20 September 2023

Here we propose a voltage-controlled Fabry–Perot modulator made of two overlapping graphene sheets separated by a hafnium oxide layer, manufactured on a silicon substrate. The applied voltage shifts the Fermi level in both layers thus changing the total surface conductivity. This in turn changes the optical parameters of the system. Due to the architecture of the modulator, ≈50% of THz power is absorbed and the applied voltage controls the ratio between the reflection and transmittance. At the resonance frequency of 414 GHz, the transmission through the Fabry–Perot modulator can be doubly reduced in a voltage range of –1.5 to 10 V. In DC measurements, it is revealed that the electrical properties of graphene sheets dramatically depend on the technological process. The proposed multilayer structure can be manufactured on any THz-transparent substrate, compatible with photolithography and atomic layer deposition (ALD) processes. Voltage-controlled surface conductivity could find its application in sensing or modulation of electromagnetic waves.
Keywords: graphene, interference, modulation, surface conductivity
PACS: 81.05.ue, 42.25.Hz, 42.79.Hp, 73.25.+i

ĮTAMPA VALDOMAS FABRY IR PEROT MODULIATORIUS
Andrius Kamarauskasa, Laurynas Staišiūnasa, Dalius Seliutaa,b, Gediminas Šlekasa, Žilvinas Kanclerisa

a Fizinių ir technologijos mokslų centras, Vilnius, Lietuva
b VILNIUS TECH, Vilnius, Lietuva
Pagamintas ir ištirtas įtampa valdomas Fabry ir Perot moduliatorius, ant silicio padėklo klojant du grafeno sluoksnius ir juos atskiriant hafnio oksidu (HfO2). Prijungus įtampą tarp grafeno sluoksnių abiejuose sluoksniuose ji skirtingai paveikia Fermi lygio padėtį, todėl keičiasi bendras paviršiaus laidumas. Tai keičia visos sistemos optinius parametrus. Dėl moduliatoriaus architektūros beveik 50 % galios sugeriama grafeno sluoksnyje. Įtampa valdomas santykis tarp atspindėtos ir praėjusios bangos per Fabry ir Perot moduliatorių. Nustačius 414 GHz rezonansinį dažnį, praėjusį elektromagnetinės bangos galingumą galima sumažinti du kartus įtampos diapazone nuo –1,5 iki 10 V. Atlikus nuolatinės srovės (DC) matavimus paaiškėjo, kad grafeno sluoksnių elektrinės savybės labai priklauso nuo technologinio proceso. Šią daugiasluoksnę struktūrą galima pagaminti ant bet kokio THz bangoms skaidraus pagrindo, suderinamo su fotolitografija bei atominio sluoksnio nusodinimo (ALD) technologija. Įtampa valdomas paviršiaus laidumas galėtų būti naudingas elektromagnetinių bangų jutikliams ar moduliatoriams.


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