References /
Nuorodos
[1] J. Zha, J.T.H. Huang, Y. Xia, D. Dong, and C. Tan, A
perspective on tellurium based optoelectronics, Appl. Phys.
Lett.
125, 070504 (2024),
https://doi.org/10.1063/5.0224623
[2] B. Zheng, Z. Wu, F. Guo, R. Ding, J. Mao, M. Xie, S.P. Lau,
and J. Hao, Large area Te/Ge heterojunction grown by molecular
beam epitaxy, Adv. Opt. Mater.
9(20), 2101052 (2021),
https://doi.org/10.1002/adom.202101052
[3] T. Zheng, M. Yang, Y. Sun, L. Han, Y. Pan, Q. Zhao, Z.
Zheng, W. Gao, and J. Li, A solution-fabricated Te/Si
mixed-dimensional van der Waals heterojunction for self-powered
photodetectors, J. Mater. Chem. C
10, 7283 (2022)
https://doi.org/10.1039/D2TC00785A
[4] A. Krotkus, R. Norkus, and I. Nevinskas, Semiconductor
characterization by terahertz excitation spectroscopy, Materials
16(7), 2859 (2023),
https://doi.org/10.3390/ma16072859
[5] R. Norkus, V. Klimas, V. Strazdienė, J. Devenson, V.
Bukauskas, G. Niaura, G. Tamulaitis, and A. Krotkus, Comparison
of electrical characteristics of thin tellurium layers obtained
from chemical solution and by thermal evaporation in vacuum, J.
Appl. Phys.
135(6), 245302 (2024),
https://doi.org/10.1063/5.0214353
[6] V.L. Malevich, A. Krotkus, A. Bičiūnas, and V. Pačebutas,
Terahertz emission from femtosecond laser illuminated (112)
surfaces of InSb, Appl. Phys.
104(12), 113117 (2008),
https://doi.org/10.1063/1.3040691
[7] P. Cicėnas, A. Geižutis, V.L. Malevich, and A. Krotkus,
Terahertz radiation from an InAs surface due to lateral
photocurrent transients, Opt. Lett.
40(22), 5164 (2015),
https://doi.org/10.1364/OL.40.005164
[8] P. Grosse,
Die Festkörpereigenschaften von Tellur
(Springer-Verlag, Berlin, Heidelberg, New York, 1969),
https://doi.org/10.1007/BFb0107291
[9] R.A. Yadav, N. Padma, S. Sen, K.R.S. Chandrakumar, H.
Donthula, and R. Rao, Anomalous vibrational behavior of two
dimensional tellurium: Layer thickness and temperature-dependent
Raman spectroscopic study, Appl. Surf. Sci.
531, 147303
(2020),
https://doi.org/10.1016/j.apsusc.2020.147303