M.S. Kagan
, I.V. Altukhov
, S.K. Paprotskiy
, A.N. Baranov
, R. Teissier
, N.D. Il’inskaya
, A.A. Usikova
, A.D. Buravlev
The vertical transport in
short-period
InAs/AlSb and GaAs/AlAs superlattices was studied. The negative
differential
conductivity was observed in a miniband transport regime as a result of
the
overlapping of confined states in a periodic quantum well structure
(Esaki-Tsu
mechanism). Several maxima appeared on current–voltage characteristics
of
the superlattices found in the non-resonant tunnelling regime. They are
shown
to be due to the influence of the optical cavity on optical transitions
within
quantum wells (Purcell effect).
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